JPH0348529Y2 - - Google Patents
Info
- Publication number
- JPH0348529Y2 JPH0348529Y2 JP9728286U JP9728286U JPH0348529Y2 JP H0348529 Y2 JPH0348529 Y2 JP H0348529Y2 JP 9728286 U JP9728286 U JP 9728286U JP 9728286 U JP9728286 U JP 9728286U JP H0348529 Y2 JPH0348529 Y2 JP H0348529Y2
- Authority
- JP
- Japan
- Prior art keywords
- electrolyte
- fet
- container
- silicon wafer
- ion sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 239000003792 electrolyte Substances 0.000 claims description 13
- 238000012360 testing method Methods 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 239000008151 electrolyte solution Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9728286U JPH0348529Y2 (en]) | 1986-06-25 | 1986-06-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9728286U JPH0348529Y2 (en]) | 1986-06-25 | 1986-06-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS636349U JPS636349U (en]) | 1988-01-16 |
| JPH0348529Y2 true JPH0348529Y2 (en]) | 1991-10-16 |
Family
ID=30964076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9728286U Expired JPH0348529Y2 (en]) | 1986-06-25 | 1986-06-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0348529Y2 (en]) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2549456B2 (ja) * | 1990-08-31 | 1996-10-30 | ミサワホーム株式会社 | ユニット住宅の屋根構造 |
-
1986
- 1986-06-25 JP JP9728286U patent/JPH0348529Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS636349U (en]) | 1988-01-16 |
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